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IRF2807PBF is a MOSFET device designed to efficiently regulate current with a voltage rating of 75V and a maximum current capacity of 82A
TO-220-3Manufacturer:
Mfr.Part #:
IRF2807PBF
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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Product IRF2807PBF is an N-channel transistor with a single configuration, making it suitable for various electronic applications. With a continuous drain current (Id) of 82 A and a drain-source voltage (Vds) of 75 V, this transistor can handle high-power requirements with ease. The ON resistance (Rds(on)) of 13 mOhm ensures efficient power handling and minimal loss during operation
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 75 V |
Id - Continuous Drain Current | 82 A | Rds On - Drain-Source Resistance | 13 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 106.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement | Configuration | Single |
Height | 15.65 mm | Length | 10 mm |
Product Type | MOSFET | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 4.4 mm | Unit Weight | 0.068784 oz |
Package/Case | TO-220-3 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.668 | $0.67 |
10+ | $0.555 | $5.55 |
50+ | $0.453 | $22.65 |
100+ | $0.396 | $39.60 |
500+ | $0.362 | $181.00 |
1000+ | $0.344 | $344.00 |
The prices above are for reference only.