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JAN2N2219AL +BOM

Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Tube

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JAN2N2219AL

  • Datasheet:

    JAN2N2219AL Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    800 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 50mA, 500mA

JAN2N2219AL Information

General Description

Bipolar (BJT) Transistor NPN 50 V 800 mA 800 mW Through Hole TO-5

Specifications

Transistor Type NPN Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 50 V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 800 mW Frequency - Transition -
Operating Temperature -55°C ~ 200°C (TJ) Grade Military
Qualification MIL-PRF-19500/251 Mounting Type Through Hole
Base Product Number 2N2219 Package/Case TO-205AA,TO-5-3MetalCan

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