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PH9030 +BOM

RF Bipolar Transistors

PH9030 General Description

General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.Features and benefits■ High efficiency due to low switching and conduction losses■ Suitable for logic level gate drive sourcesApplications■ DC-to-DC convertors■ Notebook computers■ Portable equipment■ Switched-mode power supplies

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