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RFP4N100 +BOM

High Power N-Channel MOSFET in TO-220AB Package

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RFP4N100 General Description

N-Channel 1000 V 4.3A (Tc) Through Hole TO-220-3

Key Features

  • 4.3A, 1000V
  • rDS(ON) = 3.500Ω
  • UIS Rating Curve (Single Pulse)
  • -55°C to 150°C Operating Temperature
  • Related Literature
  • - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 3.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120 nC @ 20 V
Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds -
FET Feature - Power Dissipation (Max) -
Operating Temperature - Mounting Type Through Hole
Product Category MOSFET Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1 kV Id - Continuous Drain Current 4.3 A
Rds On - Drain-Source Resistance 3.5 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 150 W Channel Mode Enhancement
Configuration Single Fall Time 50 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 50 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 170 ns Typical Turn-On Delay Time 30 ns
Width 4.7 mm Unit Weight 0.068784 oz

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