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See Technical Specifications

S29GL512T10TFI010 +BOM

512Mb Flash Memory

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

S29GL512T10TFI010
Datasheet:

S29GL512T10TFI010 Datasheet (PDF)
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
Memory Size:

512Mbit
EDA/CAD Models:

Request Free CAD Models for S29GL512T10TFI010

S29GL512T10TFI010 Information

Description

The S29GL512T10TFI010 is a NAND Flash memory chip from Infineon, offering 256Mb of storage capacity, organized into 64 sectors. This chip features a top boot block architecture, allowing for sector erase and embedded error detection. With a supply voltage of 3V, operating speed of 10ns, and industrial temperature range (-40°C to +85°C), this chip is suitable for various applications such as embedded systems, automotive electronics, and more. Its notable features include 10,000 program/erase cycles endurance, 100-year data retention, and multiple 16-bit word programming capability. This NAND Flash memory chip is designed for use in industrial control systems, networking equipment, telecommunication devices, medical devices, gaming consoles, security systems, consumer electronics, and aerospace and defense systems.

Package

The package type of S29GL512T10TFI010 is TSOP-56.

Manufacturer

The manufacturer of the S29GL512T10TFI010 is Infineon Technologies, a German-based semiconductor company that specializes in microelectronics and system solutions for automotive, industrial, and consumer applications.

Applications

The application areas of S29GL512T10TFI010 are: Embedded systems, Automotive electronics, Industrial control systems, Networking equipment, Telecommunication devices, Medical devices, Gaming consoles, Security systems, Consumer electronics, Aerospace and defense systems.

Equivalent

Based on the product features and specifications, equivalent products to S29GL512T10TFI010 could be:

Micron's NAND flash memory chips (e.g., MT29F512GAWP)
Samsung's NAND flash memory chips (e.g., K9HAG512WMC)
Western Digital's NAND flash memory chips (e.g., WD128GV3L)

These products possess similar characteristics such as 512MB capacity, industrial temperature range, and high endurance. However, please note that the exact equivalent product may depend on specific application requirements.

Specifications

Category	Integrated Circuits (ICs)MemoryMemory	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	512Mbit	Memory Organization	64M x 8
Memory Interface	Parallel	Write Cycle Time - Word, Page	60ns
Access Time	100 ns	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	S29GL512	RHoS	yes
PBFree	yes	HalogenFree	yes
feature-organization		feature-minimum-operating-supply-voltage-v	2.7
feature-maximum-access-time-ns	100	feature-process-technology	45nm, MirrorBit
feature-maximum-operating-supply-voltage-v	3.6	feature-maximum-operating-current-ma	60
feature-packaging	Tray	feature-rad-hard
feature-pin-count	56	feature-cecc-qualified	No
feature-esd-protection		feature-military	No
feature-aec-qualified	No	feature-aec-qualified-number
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	3A991b.1.a.	feature-svhc	No
feature-svhc-exceeds-threshold	No	Package/Case	TSOP56