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STS7C4F30L +BOM

Electronic component for high-power circuitry

Manufacturer:

Stmicroelectronics
Mfr.Part #:

STS7C4F30L
Datasheet:

STS7C4F30L Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for STS7C4F30L

STS7C4F30L Information

General Description

STS7C4F30L is a Mosfet Array from STMicroelectronics, offering a high-performance solution for demanding applications. This device is a 30V, 7A/4A, 2W Surface Mount 8-SOIC Mosfet Array that combines two logic-level N-channel and P-channel FETs in a single package. The device is designed to be used in automotive, industrial, and consumer applications where high current and voltage handling are required. Key advantages of the STS7C4F30L include its high reliability, low thermal resistance, and compact design. Matters needing attention include the part's obsolescence status, which may impact inventory management and future development. Other instructions for usage include ensuring proper storage conditions to maintain device integrity.

Key Features

Logic-level gate
30V Drain-to-Source Voltage (VDSS)
Current - Continuous Drain (ID) up to 7A/4A
Rds On (Max) as low as 22mOhm at 3.5A, 10V
Vgs(th) (Max) as low as 2.5V at 250µA
Gate Charge (Qg) (Max) as low as 23nC at 5V
Input Capacitance (CISS) (Max) as high as 1050pF at 25V
Power - Max: 2W

Application

Automotive systems
Industrial automation applications
Consumer electronics
General-purpose power control and switching

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	7 A	Rds On - Drain-Source Resistance	22 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 60 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2 W
Channel Mode	Enhancement	Configuration	Dual
Fall Time	10 ns, 35 ns	Height	1.65 mm
Length	5 mm	Product Type	MOSFET
Rise Time	10 ns, 35 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	42 ns, 125 ns	Typical Turn-On Delay Time	22 ns, 25 ns
Width	4 mm	Unit Weight	0.002610 oz
Package/Case	SOIC-8