This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDB3632 +BOM

High-power N-Channel MOSFET with PowerTrench® technology, capable of handling up to 80A of current at 100V with a low resistance of 9mΩ

Manufacturer:

Onsemi
Mfr.Part #:

FDB3632
Datasheet:

FDB3632 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FDB3632

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDB3632 General Description

Introducing the exceptional FDB3632 N-Channel PowerTrench® MOSFET, a cutting-edge component designed to deliver superior performance in power management applications. With a voltage rating of 100V and a current rating of 80A, this MOSFET boasts an impressively low on-resistance of 9mΩ, ensuring efficient power delivery and reduced heat generation. The innovative shielded gate design enhances switching speeds and minimizes QSYNC, resulting in improved overall system efficiency. Additionally, the soft reverse-recovery intrinsic body diode offers enhanced performance in synchronous rectification applications

Key Features

R_DS(ON) = 7.5mΩ (Typ.) @ V_GS = 10V, I_D = 80A
Q_G(tot) = 84nC (Typ.) @ V_GS = 10V
Low Miller Charge
Low Q_RR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant

Application

AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
Other Data Processing

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	80 A
Rds On - Drain-Source Resistance	7.5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	110 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	310 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDB3632
Configuration	Single	Fall Time	46 ns
Height	4.83 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	39 ns
Factory Pack Quantity	800	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	96 ns	Typical Turn-On Delay Time	30 ns
Width	9.65 mm	Part # Aliases	FDB3632_NL
Unit Weight	0.139332 oz