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See Technical Specifications

TLE2072ACD +BOM

Dual, 38-V, 10-MHz, 40-V/μs slew rate, 2-mV offset voltage, In to V+, JFET-input op amp

Manufacturer:

TI
Mfr.Part #:

TLE2072ACD
Datasheet:

TLE2072ACD Datasheet (PDF)
Number of channels:

2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V):

38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V):

4.5
Rail-to-rail:

In to V+
EDA/CAD Models:

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TLE2072ACD General Description

The TLE207x amplifiers are fully specified for use with ±15 V and ±5 V supplies, but for low-voltage or single-supply systems, the LinCMOS families of operational amplifiers are recommended. Transitioning from BiFET to CMOS amplifiers requires attention to slew rate, bandwidth requirements, and output loading to ensure smooth operation. TLE207x offers a reliable solution for applications requiring high performance and precision in operational amplifiers

Key Features

Direct Upgrades to TL05x, TL07x, and
TL08x BiFET Operational Amplifiers
Greater Than 2× Bandwidth (10 MHz) and
3× Slew Rate (45 V/µs) Than TL07x
Ensured Maximum Noise Floor 17 nV/Hz
On-Chip Offset Voltage Trimming for
Improved DC Performance
Wider Supply Rails Increase Dynamic
Signal Range to ±19 V

Specifications

Number of channels	2	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	4.5	Rail-to-rail	In to V+
GBW (typ) (MHz)	10	Slew rate (typ) (V/µs)	40
Vos (offset voltage at 25°C) (max) (mV)	3.5	Iq per channel (typ) (mA)	1.55
Vn at 1 kHz (typ) (nV√Hz)	12	Rating	Catalog
Operating temperature range (°C)	-40 to 85, 0 to 70	Offset drift (typ) (µV/°C)	2.4
Input bias current (max) (pA)	175	CMRR (typ) (dB)	98
Iout (typ) (A)	0.03	Architecture	FET
Input common mode headroom (to negative supply) (typ) (V)	3.1	Input common mode headroom (to positive supply) (typ) (V)	0
Output swing headroom (to negative supply) (typ) (V)	0.8	Output swing headroom (to positive supply) (typ) (V)	-0.9