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1EDN7550UXTSA1 +BOM

6.5ns turn-on time

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

1EDN7550UXTSA1
Datasheet:

1EDN7550UXTSA1 Datasheet (PDF)
Series:

EiceDriver™
Programmable:

Not Verified
Driven Configuration:

High-Side
Channel Type:

Single

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

1EDN7550UXTSA1 General Description

Designed to meet the needs of modern industrial applications, the 1EDN7550UXTSA1 by Infineon Technologies is an exceptional high-speed, dual-channel isolated gate driver IC. This innovative IC is specifically engineered to drive two IGBTs or MOSFETs in a half-bridge configuration with precision and rapid switching speeds, making it a versatile solution for motor drives, solar inverters, and UPS systems. Key features such as an output current capability of 4A per channel, advanced active Miller clamp function, and integrated desaturation detection for overcurrent protection ensure efficient and reliable performance. Additionally, the inclusion of under-voltage lockout and over-temperature shut down adds another layer of safety and protection. Housed in a compact 8x5mm package, the 1EDN7550UXTSA1 is well-suited for space-constrained applications, while its wide operating temperature range of -40°C to 150°C ensures durability and resilience in harsh environments

Infineon Technologies Corporation Inventory

Key Features

Truly differential inputs for configurable common mode robustness
4A source current
8A sink current
Separate source/sink outputs
Low-ohmic output stage
29ns input minimum pulse width
5A reverse current robustness of the outputs
4V UVLO version
TSNP-6 package
Robust
Small
PCB layout flexibility
High power density
Short time to market
Boost-PFCs with Kelvin-source MOSFETs
Interleaved PFC
Full-bridge synchronous rectification stages
48V to 12V intermediate bus converters
Buck-boost converters
Low- and medium-voltage half-bridges
Robust against ground shifts from power MOSFET switching
Low MOSFET switching losses
Robust against false MOSFET triggering
Highest effective MOSFET driving power
Efficiency gains
Increased power density and BOM savings
Instant MOSFET protection under abnormal operation
High power density

Infineon Technologies Corporation Original Stock

Specifications

Category	Integrated Circuits (ICs)Power Management (PMIC)Gate Drivers	Series	EiceDriver™
Programmable	Not Verified	Driven Configuration	High-Side
Channel Type	Single	Number of Drivers	1
Gate Type	N-Channel, P-Channel MOSFET	Voltage - Supply	4.5V ~ 20V
Logic Voltage - VIL, VIH	-	Current - Peak Output (Source, Sink)	4A, 8A
Input Type	Non-Inverting	Rise / Fall Time (Typ)	6.5ns, 4.5ns
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	1EDN7550	RHoS	yes
PBFree	yes	HalogenFree	yes