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1N4448W-7-F +BOM

With a 75V voltage threshold and 0.4W power dissipation, the 1N4448W-7-F product is housed in a SOD123 package

1N4448W-7-F General Description

The 1N4448W-7-F is an exceptional high-speed switching diode from ON Semiconductor, designed for a wide range of applications. With a maximum repetitive peak reverse voltage of 100V and a continuous forward current of 150mA, this small signal device boasts fast switching times and low leakage current. Its compact SOD-323 surface mount package makes it ideal for space-constrained designs, and its operating temperature range of -65°C to 175°C ensures versatility in various conditions. Engineers value its low forward voltage drop and high reliability, making it a popular choice for voltage clamping, freewheeling, and reverse polarity protection applications

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Key Features

HIGH RELIABILITY
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Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 2 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.10.00.70
Factory Lead Time 17 Weeks, 3 Days Additional Feature HIGH RELIABILITY
Configuration SINGLE Diode Element Material SILICON
Diode Type RECTIFIER DIODE Forward Voltage-Max (VF) 0.72 V
JESD-30 Code R-PDSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Non-rep Pk Forward Current-Max 2 A
Number of Elements 1 Number of Phases 1
Number of Terminals 2 Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C Output Current-Max 0.25 A
Peak Reflow Temperature (Cel) 260 Power Dissipation-Max 0.4 W
Qualification Status Not Qualified Rep Pk Reverse Voltage-Max 75 V
Reverse Recovery Time-Max 0.004 µs Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30

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