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See Technical Specifications

25TTS12S +BOM

25TTS12S Thyristor SCR

Manufacturer:

Vishay
Mfr.Part #:

25TTS12S
Datasheet:

25TTS12S Datasheet (PDF)
Breakover Current IBO Max:

350 A
Rated Repetitive Off-State Voltage VDRM:

1.2 kV
Off-State Leakage Current @ VDRM IDRM:

500 uA
Vf - Forward Voltage:

1.25 V
EDA/CAD Models:

Request Free CAD Models for 25TTS12S

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25TTS12S General Description

The 25TTS12S semiconductor device is a powerhouse when it comes to high-power applications. With its impressive 25 amp, 1200 volt rating, this silicon controlled rectifier (SCR) is built to deliver reliable performance in a variety of industrial and commercial settings. Its compact and rugged design, featuring a stud cathode and stud anode, makes it easy to mount and install for efficient power control

Key Features

A high-performance SCR module with advanced features.
Designed for robust and reliable power management in industrial settings.
Suitable for applications requiring high current and voltage handling capabilities.

Application

SCR in power supplies
High current
Industrial equipment

Specifications

Product Category	SCRs	Breakover Current IBO Max	350 A
Rated Repetitive Off-State Voltage VDRM	1.2 kV	Off-State Leakage Current @ VDRM IDRM	500 uA
Vf - Forward Voltage	1.25 V	Maximum Gate Peak Inverse Voltage	10 V
Gate Trigger Voltage - Vgt	2 V	Gate Trigger Current - Igt	45 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 125 C
Mounting Style	SMD/SMT	Current Rating	16 A
Height	4.83 mm	Holding Current Ih Max	100 mA
Length	10.67 mm	Non Repetitive On-State Current	350 A
Product Type	SCRs	Factory Pack Quantity	50
Subcategory	Thyristors	Type	SCRs
Width	9.65 mm	Unit Weight	0.070548 oz