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See Technical Specifications

2N5060 +BOM

Compact TO-92 package ensures easy integration in devices

Manufacturer:

onsemi
Mfr.Part #:

2N5060
Datasheet:

2N5060 Datasheet (PDF)
Breakover Current IBO Max:

10 A
Rated Repetitive Off-State Voltage VDRM:

30 V
Off-State Leakage Current @ VDRM IDRM:

10 uA
Vf - Forward Voltage:

1.7 V
EDA/CAD Models:

Request Free CAD Models for 2N5060

Email: [email protected]

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Tel: +852 95804164

2N5060 General Description

With its compact TO-92 packaging, the 2N5060 offers a convenient and space-saving solution for circuit design. Its sensitive gate feature allows for easy triggering and precise control of current flow, making it suitable for use in a wide range of applications. The reverse blocking thyristor design ensures reliable performance and efficient operation, making it a valuable component for any electronic project

Specifications

Product Category	SCRs	Breakover Current IBO Max	10 A
Rated Repetitive Off-State Voltage VDRM	30 V	Off-State Leakage Current @ VDRM IDRM	10 uA
Vf - Forward Voltage	1.7 V	Maximum Gate Peak Inverse Voltage	5 V
Gate Trigger Voltage - Vgt	800 mV	Gate Trigger Current - Igt	200 uA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 110 C
Mounting Style	Through Hole	Current Rating	510 mA
Height	5.33 mm	Holding Current Ih Max	5 mA
Length	5.2 mm	Non Repetitive On-State Current	10 A
Product Type	SCRs	Factory Pack Quantity	5000
Subcategory	Thyristors	Type	SCR
Width	4.19 mm