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See Technical Specifications

2N6349A +BOM

Triacs THY 12A 800V TRIAC

Manufacturer:

onsemi
Mfr.Part #:

2N6349A
Datasheet:

2N6349A Datasheet (PDF)
Non Repetitive On-State Current:

100 A
Rated Repetitive Off-State Voltage VDRM:

800 V
Off-State Leakage Current @ VDRM IDRM:

10 uA
On-State Voltage:

1.75 V
EDA/CAD Models:

Request Free CAD Models for 2N6349A

2N6349A General Description

Triacs Silicon Bidirectional ThyristorsDesigned primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.• Blocking Voltage to 800 Volts• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability• Gate Triggering Guaranteed in all Four Quadrants• For 400 Hz Operation, Consult Factory• 8 Ampere Devices Available as 2N6344 thru 2N6349• Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code

Specifications

Product Category	Triacs	Non Repetitive On-State Current	100 A
Rated Repetitive Off-State Voltage VDRM	800 V	Off-State Leakage Current @ VDRM IDRM	10 uA
On-State Voltage	1.75 V	Holding Current Ih Max	40 mA
Gate Trigger Voltage - Vgt	2.5 V	Gate Trigger Current - Igt	75 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 125 C
Mounting Style	Through Hole	Product Type	Triacs
Subcategory	Thyristors	Unit Weight	0.211644 oz