This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2N6399 +BOM

Silicon Controlled Rectifier, 12A I(T)RMS, 5000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, CASE 221A, 3 PIN

Manufacturer:

onsemi
Mfr.Part #:

2N6399
Datasheet:

2N6399 Datasheet (PDF)
Series:

2N639X
Breakover Current IBO Max:

100 A
Rated Repetitive Off-State Voltage VDRM:

800 V
Off-State Leakage Current @ VDRM IDRM:

10 uA
EDA/CAD Models:

Request Free CAD Models for 2N6399

2N6399 General Description

Another standout feature of the 2N6399 is its high operating frequency of 4MHz, which makes it ideal for applications requiring rapid switching capabilities. This attribute opens up a wide range of possibilities for using the transistor in high-speed circuits that demand quick response times

Specifications

Product Category	SCRs	Series	2N639X
Breakover Current IBO Max	100 A	Rated Repetitive Off-State Voltage VDRM	800 V
Off-State Leakage Current @ VDRM IDRM	10 uA	Vf - Forward Voltage	2.2 V
Gate Trigger Voltage - Vgt	1.5 V	Gate Trigger Current - Igt	30 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 125 C
Mounting Style	Through Hole	Height	9.28 mm
Holding Current Ih Max	50 mA	Length	10.28 mm
Non Repetitive On-State Current	100 A	Product Type	SCRs
Factory Pack Quantity	500	Subcategory	Thyristors
Type	SCR	Width	4.82 mm
Unit Weight	0.211644 oz