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See Technical Specifications

2N6401G +BOM

SCR 100 V 16 A Standard Recovery Through Hole TO-220AB

Manufacturer:

LITTELFUSE
Mfr.Part #:

2N6401G
Datasheet:

2N6401G Datasheet (PDF)
Breakover Current IBO Max:

160 A
Rated Repetitive Off-State Voltage VDRM:

100 V
Off-State Leakage Current @ VDRM IDRM:

0.01 mA
Forward Voltage Drop:

1.7 V
EDA/CAD Models:

Request Free CAD Models for 2N6401G

2N6401G General Description

This Silicon Controlled Rectifier is designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies, or wherever half-wave silicon gate-controlled, solid-state devices are needed.

Key Features

Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
Pb-Free Packages are Available

Specifications

Breakover Current IBO Max	160 A	Rated Repetitive Off-State Voltage VDRM	100 V
Off-State Leakage Current @ VDRM IDRM	0.01 mA	Forward Voltage Drop	1.7 V
Gate Trigger Voltage (Vgt)	1.5 V	Gate Trigger Current (Igt)	30 mA
Holding Current (Ih Max)	40 mA	Mounting Style	Through Hole
Packaging	Bulk	Maximum Operating Temperature	+ 125 C
Minimum Operating Temperature	- 40 C	Factory Pack Quantity	500