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2SD2256 +BOM

2SB1494. Features. High breakdown voltage and high current (VCEO = 25 A) Built-in C-E diode.

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Key Features

  • High breakdown voltage and high current (VCEO = 120 V, IC = 25 A)
  • Built-in C-E diode

Specifications

Source Content uid 2SD2256 Pbfree Code No
Part Life Cycle Code Obsolete Pin Count 3
Reach Compliance Code ECCN Code EAR99
Collector Current-Max (IC) 25 A Collector-Emitter Voltage-Max 120 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DC Current Gain-Min (hFE) 500
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 120 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application AMPLIFIER Transistor Element Material SILICON

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