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See Technical Specifications

BAS116 +BOM

Diodes - General Purpose, Power, Switching

Manufacturer:

Taiwan Semiconductor Corporation
Mfr.Part #:

BAS116
Datasheet:

BAS116 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8541.10.00.70
EDA/CAD Models:

Request Free CAD Models for BAS116

BAS116 General Description

Whether used in power supplies, battery chargers, or voltage regulators, the BAS116 excels in converting alternating current (AC) to direct current (DC) with high efficiency. Its compact size and lightweight design further enhance its versatility in various electronic devices

Key Features

Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 us
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
AEC-Q101 qualified

Application

Low leakage current applications in surface mounted circuits.

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.10.00.70
Additional Feature	LOW LEAKAGE CURRENT	Application	GENERAL PURPOSE
Breakdown Voltage-Min	75 V	Configuration	SINGLE
Diode Element Material	SILICON	Diode Type	RECTIFIER DIODE
Forward Voltage-Max (VF)	1.25 V	JESD-30 Code	R-PDSO-G3
Number of Elements	1	Number of Phases	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Output Current-Max	0.2 A
Power Dissipation-Max	0.225 W	Rep Pk Reverse Voltage-Max	75 V
Reverse Current-Max	0.005 µA	Reverse Recovery Time-Max	3 µs
Reverse Test Voltage	75 V	Surface Mount	YES
Terminal Form	GULL WING	Terminal Position	DUAL