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See Technical Specifications

BC817DS,115 +BOM

This product is a Bipolar Transistor - BJT, specifically designed for high-speed switching applications

Manufacturer:

Nexperia
Mfr.Part #:

BC817DS,115
Datasheet:

BC817DS,115 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

45 V
EDA/CAD Models:

Request Free CAD Models for BC817DS,115

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BC817DS,115 General Description

The BC817DS,115 from Nexperia is an exceptional NPN transistor, known for its wide range of applications and efficient performance. With its high current gain and low saturation voltage, it is perfect for amplification, switching, and voltage regulation in various electronic designs. Its maximum collector current (IC) of 500mA and collector-base voltage (VCBO) of 45V make it capable of handling moderate power levels, while its DC current gain (hFE) ranging from 110 to 800 ensures efficient signal amplification in different circuit configurations. Additionally, its compact SOT-363 (SC-88) package makes it ideal for miniaturized electronic devices and densely populated circuit boards, saving valuable board space and offering design flexibility

Key Features

This transistor has a high current rating of 500mA and voltage rating of 45V with hFE (current gain) of 200-450 and power dissipation of 625mW
Suitable for small signal amplification and switching applications
The BC817DS,115 is a versatile NPN transistor

Application

Efficient and versatile
Unmatched functionality
Designed for excellence

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Dual
Collector- Emitter Voltage VCEO Max	45 V	Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	700 mV
Maximum DC Collector Current	500 mA	Pd - Power Dissipation	600 mW
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Series	BC817
Continuous Collector Current	500 mA	DC Collector/Base Gain hfe Min	40
DC Current Gain hFE Max	160 at 100 mA, 1 V	Height	1 mm
Length	3.1 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Technology	Si	Width	1.7 mm
Part # Aliases	934057319115	Unit Weight	0.000386 oz
Transistor Type	2 NPN (Dual)	Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	45V	Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA, 1V
Power - Max	600mW	Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)	Grade	Automotive
Qualification	AEC-Q101	Mounting Type	Surface Mount
Base Product Number	BC817