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See Technical Specifications

BC857BV +BOM

Bipolar Transistors - BJT

Manufacturer:

NXP SEMICONDUCTORS
Mfr.Part #:

BC857BV
Datasheet:

BC857BV Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Transferred
Pin Count:

6
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for BC857BV

BC857BV General Description

TRANSISTOR 100 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 1.60 X 1.20 MM, 0.55 MM HEIGHT, ULTRA THIN, PLASTIC PACKAGE-6, BIP General Purpose Small Signal

Key Features

300 mW total power dissipation
Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
Reduces required board space
Reduces pick and place costs

Application

General purpose switching and amplification

Specifications

Source Content uid	BC857BV	Pbfree Code	Yes
Part Life Cycle Code	Transferred	Pin Count	6
Reach Compliance Code	compliant	ECCN Code	EAR99
Collector Current-Max (IC)	0.1 A	Collector-Emitter Voltage-Max	45 V
Configuration	SEPARATE, 2 ELEMENTS	DC Current Gain-Min (hFE)	200
JESD-30 Code	R-PDSO-F6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	0.3 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin (Sn)
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	100 MHz