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BCM56DSX +BOM

Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 80V 1A 155MHz 500mW Surface Mount 6-TSOP

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BCM56DSX General Description

NPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.PNP/PNP complement: BCM53DS

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Key Features

  • High collector current capability IC and ICM
  • Reduces component count
  • Reduces pick and place costs
  • Current gain matching 5%
  • Application-optimized pinout
  • AEC-Q101 qualified
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Application

  • Current mirror
  • Differential amplifier
  • Linear voltage regulators
  • MOSFET drivers
  • High-side switches
  • Power management
  • Amplifiers
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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 400 mW
Gain Bandwidth Product fT 155 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Continuous Collector Current 1 A
DC Collector/Base Gain hfe Min 63 DC Current Gain hFE Max 250
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Part # Aliases 934070952115 Unit Weight 0.000391 oz

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