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See Technical Specifications

BD5240G-TR +BOM

Voltage Detection: 4.0V

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

BD5240G-TR
Datasheet:

BD5240G-TR Datasheet (PDF)
Series:

BD52xx
Programmabe:

Not Verified
Type:

Voltage Detector
Number Of Voltages Monitored:

1
EDA/CAD Models:

Request Free CAD Models for BD5240G-TR

BD5240G-TR General Description

The BD5240G-TR sets a high standard for high-speed NPN transistors with its combination of performance, efficiency, and environmental compliance. Its robust design, featuring a maximum collector-emitter voltage of 60V and a collector current of 3A, makes it a reliable choice for demanding amplifier and switching applications. The transistor's small surface-mount package optimizes space utilization, making it a convenient option for compact designs where size matters. With its low saturation voltage, high current gain, and low reverse transfer capacitance, the BD5240G-TR delivers exceptional performance while minimizing energy consumption and signal distortion. Perfect for a wide range of applications, this RoHS-compliant transistor embodies efficiency and reliability in a tiny package

Key Features

1) Detection voltage: 2.3V to 6.0V (Typ.), 0.1V steps
2) High accuracy detection voltage: ±1.0%
3) Ultra-low current consumption: 0.8µA (Typ.)
4) Nch open drain output (BD52G/FVE), CMOS output (BD53G/FVE)
5) Compact packages VSOF5: BD52FVE, BD53FVE
SSOP5: BD52G, BD53G

Specifications

Series	BD52xx	Programmabe	Not Verified
Type	Voltage Detector	Number of Voltages Monitored	1
Voltage - Threshold	4V	Output	Open Drain or Open Collector
Reset	Active Low	Operating Temperature	-40°C ~ 105°C (TA)
Mounting Type	Surface Mount	Base Product Number	BD5240