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BD5245G-TR +BOM

High-performance voltage detector for precise sensing applications

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

BD5245G-TR
Datasheet:

BD5245G-TR Datasheet (PDF)
Series:

BD52xx
Programmabe:

Not Verified
Type:

Voltage Detector
Number Of Voltages Monitored:

1
EDA/CAD Models:

Request Free CAD Models for BD5245G-TR

BD5245G-TR General Description

The BD5245G-TR P-channel MOSFET transistor by Rohm Semiconductor offers exceptional performance for general-purpose switching applications. With a low threshold voltage of -2.0V and a maximum drain-source voltage of -40V, this transistor is designed to meet the requirements of diverse electronic systems. Its continuous drain current rating of -3.5A and total power dissipation of 1.25W at 25°C make it a reliable choice for power management and load switching applications. The transistor's low on-state resistance of 0.95 ohms and fast switching speed ensure efficient operation and precise control in a compact SOT-89 package, making it an ideal solution for space-constrained designs

Key Features

1) Detection voltage: 2.3V to 6.0V (Typ.), 0.1V steps
2) High accuracy detection voltage: ±1.0%
3) Ultra-low current consumption: 0.8µA (Typ.)
4) Nch open drain output (BD52G/FVE), CMOS output (BD53G/FVE)
5) Compact packages VSOF5: BD52FVE, BD53FVE
SSOP5: BD52G, BD53G

Specifications

Series	BD52xx	Programmabe	Not Verified
Type	Voltage Detector	Number of Voltages Monitored	1
Voltage - Threshold	4.5V	Output	Open Drain or Open Collector
Reset	Active Low	Operating Temperature	-40°C ~ 105°C (TA)
Mounting Type	Surface Mount	Base Product Number	BD5245