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BGY67 +BOM

200 MHz, 22 dB gain reverse amplifier

  • Manufacturer:

    NXP SEMICONDUCTORS

  • Mfr.Part #:

    BGY67

  • Datasheet:

    BGY67 Datasheet (PDF) pdf-icon

  • Part Life Cycle Code:

    Obsolete

  • Additional Feature:

    LOW NOISE

  • Characteristic Impedance:

    75 Ω

  • Construction:

    MODULE

Key Features

  • Excellent linearity
  • Extremely low noise
  • Silicon nitride passivation
  • Rugged construction
  • TiPtAu metallized crystals ensure optimal reliability

Specifications

Source Content uid BGY67 Part Life Cycle Code Obsolete
Reach Compliance Code Additional Feature LOW NOISE
Characteristic Impedance 75 Ω Construction MODULE
Gain 21.5 dB Operating Frequency-Max 200 MHz
Operating Frequency-Min 5 MHz Operating Temperature-Max 90 °C
Operating Temperature-Min -20 °C Power Supplies 24 V
RF/Microwave Device Type WIDE BAND HIGH POWER Supply Current-Max 230 mA
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