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BLM7G1822S-40PB +BOM

RF Small Signal Field-Effect Transistor BLM7G1822S-40PB

BLM7G1822S-40PB General Description

General descriptionThe BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s stateof the art GEN7 LDMOS technology. This multiband device is perfectly suited as generalpurpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz.Available in gull wing or straight lead outline.Features and benefits Designed for broadband operation (frequency 1805 MHz to 2170 MHz) High section-to-section isolation enabling multiple combinations Integrated temperature compensated bias Biasing of individual stages is externally accessible Integrated ESD protection Excellent thermal stability High power gain On-chip matching for ease of use For RoHS compliance see the product details on the Ampleon websiteApplications RF power MMIC for W-CDMA base stations in the 1805 MHz to 2170 MHz frequencyrange. Possible circuit topologies are the following as also depicted in Section 8.1: Dual section or single ended Doherty Quadrature combined Push-pull

Specifications

ECCN (US) EAR99 Part Status LTB
SVHC Yes SVHC Exceeds Threshold Yes
Number of Channels per Chip 2 Maximum Operating Frequency (MHz) 2170
Typical Power Gain (dB) [email protected] Maximum Input Return Loss (dB) 15(Typ)@2167.5MHz
Maximum Operating Supply Voltage (V) 65 Power Supply Type Single
Maximum Operating Temperature (°C) 225 Mounting Surface Mount
PCB changed 14 Tab 2Tab
Pin Count 16

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