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Field-Effect Transistor for RF Power
HSOP-FManufacturer:
Mfr.Part #:
BLP15M7160P
Datasheet:
ECCN (US):
EAR99
Configuration:
Dual Common Source
Channel Mode:
Enhancement
Channel Type:
N
EDA/CAD Models:
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General descriptionA 160W LDMOS RF power transistor for broadcast transmitter and industrialapplications. The transistor is suitable for the frequency range HF to 1500 MHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitalapplications.Features and benefits Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)Applications Communication transmitter applications in the HF to 1500 MHz frequency range Industrial applications in the HF to 1500 MHz frequency range Single product Doherty applications
ECCN (US) | EAR99 | Part Status | Active |
Configuration | Dual Common Source | Channel Mode | Enhancement |
Channel Type | N | Number of Elements per Chip | 2 |
Mode of Operation | Pulse|Class-B | Process Technology | LDMOS |
Maximum Drain Source Voltage (V) | 65 | Maximum Gate Source Voltage (V) | 11 |
Maximum Gate Threshold Voltage (V) | 2.3 | Maximum VSWR | 10 |
Maximum Gate Source Leakage Current (nA) | 140 | Maximum IDSS (uA) | 1.4 |
Maximum Drain Source Resistance (MOhm) | 200(Typ)@6.05V | Typical Input Capacitance @ Vds (pF) | 81@28V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 1.6@28V | Typical Output Capacitance @ Vds (pF) | 50@28V |
Typical Forward Transconductance (S) | 6 | Output Power (W) | 160(Typ) |
Typical Power Gain (dB) | 19.4 | Maximum Frequency (MHz) | 1500 |
Minimum Frequency (MHz) | 10 | Typical Drain Efficiency (%) | 59.7 |
Minimum Operating Temperature (°C) | -65 | Maximum Operating Temperature (°C) | 200 |
Mounting | Surface Mount | PCB changed | 4 |
Pin Count | 4 |
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