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DAN217FHT146 +BOM

Stable supply and high reliability characterize ROHM's switching diodes, which comprise diode arrays, catering to a wide array of applications

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

DAN217FHT146
Datasheet:

DAN217FHT146 Datasheet (PDF)
Technology:

Standard
Voltage - DC Reverse (Vr) (Max):

80 V
Current - Average Rectified (Io):

100mA
Voltage - Forward (Vf) (Max) @ If:

1.2 V @ 100 mA
EDA/CAD Models:

Request Free CAD Models for DAN217FHT146

DAN217FHT146 General Description

The DAN217FHT146 by Infineon Technologies sets a high standard in power MOSFET transistors with its exceptional performance and reliability. Its ability to handle a drain-source voltage of 100V and a continuous drain current of 70A makes it a formidable option for applications requiring robust power management solutions. The transistor's low on-state resistance of 4.1mΩ contributes to efficient power utilization and high current handling capacity, setting it apart as a top choice in the field

Key Features

Low on-state resistance (0.1 ohm maximum)
High load voltage rating (350 VAC peak)
High isolation voltage (5,000 VAC peak)
Low input power consumption (50 mW maximum)
Small package size (4-pin SMD)

Application

Industrial control systems
Power distribution systems
Medical equipment
Security systems
Instrumentation and measurement systems

Specifications

Category	Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes	Series	-
Technology	Standard	Voltage - DC Reverse (Vr) (Max)	80 V
Current - Average Rectified (Io)	100mA	Voltage - Forward (Vf) (Max) @ If	1.2 V @ 100 mA
Speed	Small Signal =< 200mA (Io), Any Speed	Reverse Recovery Time (trr)	4 ns
Current - Reverse Leakage @ Vr	100 nA @ 70 V	Capacitance @ Vr, F	3.5pF @ 6V, 1MHz
Mounting Type	Surface Mount	Operating Temperature - Junction	150°C (Max)
Base Product Number	DAN217