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DDB2503-000 +BOM

Schottky Diodes & Rectifiers X-BAND Cj @ 0V .15pF Vf 200-350mV @ 1mA

DDB2503-000 General Description

RF Diode Schottky - Single 2V 100 mA 75 mW

Key Features

  • Both P-type and N-type low barrier silicon available
  • Low 1/f noise
  • Bonded junctions for reliability
  • Planar passivated beam-lead and chip construction
  • See also zero bias silicon schottky barrier detector diodes

Application

  • Surveillance Systems
  • Space
  • Radar
  • Instrumentation
  • Electronic Warfare
  • Military Communications
  • Avionics

Specifications

Category Discrete Semiconductor ProductsDiodesRF Diodes Series *

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