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DTA143ESATP +BOM

Device DTA143ESATP: Single-Element Bipolar Transistor

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DTA143ESATP General Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole SPT

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Key Features

  • 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
  • 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
  • 3) Only the on/off conditions need to be set for operation, making device design easy.

Specifications

Product Category Bipolar Transistors - Pre-Biased Configuration Single
Transistor Polarity PNP Typical Input Resistor 4.7 kOhms
Typical Resistor Ratio 1 Mounting Style SMD/SMT
DC Collector/Base Gain hfe Min 30 Continuous Collector Current 100 mA
Peak DC Collector Current 100 mA Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Height 3 mm
Length 4 mm Product Type BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity 1 Subcategory Transistors
Width 2 mm

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