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See Technical Specifications

E4D20120G +BOM

1-Phase Silicon Carbide Schottky Rectifier Diode, 1 Element, 56A, 1200V V(RRM), TO-263AB, 2 PIN Configuration

Manufacturer:

Wolfspeed, Inc.
Mfr.Part #:

E4D20120G
Datasheet:

E4D20120G Datasheet (PDF)
Series:

E-Series
Technology:

SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):

1200 V
Current - Average Rectified (Io):

56A
EDA/CAD Models:

Request Free CAD Models for E4D20120G

E4D20120G General Description

With its Silicon Carbide construction, this diode is well-suited for high-temperature and high-frequency applications where traditional silicon diodes may fall short. Its TO-263AB package is designed for thermal efficiency and easy mounting on a circuit board

Specifications

Series	E-Series	Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V	Current - Average Rectified (Io)	56A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 20 A	Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns	Current - Reverse Leakage @ Vr	200 µA @ 1200 V
Capacitance @ Vr, F	1474pF @ 0V, 1MHz	Grade	Automotive
Mounting Type	Surface Mount	Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	E4D20120