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EL357N-G +BOM

Optocouplers Featuring 3750Vrms Isolation Voltage and Temperature Operation from -55 to +100 Degrees

Key Features

  • High-speed, low-loss gate driver for SiC and Si MOSFETs
  • Operates at high temperatures up to 125°C
  • Wide input voltage range of 9 V to 25 V
  • Under-voltage lockout protection provided
  • Peak output drive current up to 6 A

Application

  • The EL357N-G phototransistor photocoupler can be used in applications such as signal transmission
  • noise isolation
  • power supply regulation
  • and motor control

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.40.80.00 Additional Feature UL APPROVED
Configuration SINGLE Mounting Feature SURFACE MOUNT
Number of Elements 1 Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Surface Mount YES Product Category Transistor Output Optocouplers
Mounting Style SMD/SMT Number of Channels 1 Channel
Isolation Voltage 3750 Vrms Output Type NPN Phototransistor
Current Transfer Ratio - Min 50 % Current Transfer Ratio - Max 600 %
If - Forward Current 50 mA Vf - Forward Voltage 1.4 V
Maximum Collector Emitter Voltage 80 V Maximum Collector Current 50 mA
Maximum Collector Emitter Saturation Voltage 200 mV Rise Time 18 us
Fall Time 18 us Vr - Reverse Voltage 6 V
Pd - Power Dissipation 200 mW Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 110 C Current Transfer Ratio 50 %
Product Type Transistor Output Optocouplers Factory Pack Quantity 100
Subcategory Optocouplers Unit Weight 0.002822 oz

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