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EPA060B-70 +BOM

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, 0.070 INCH, CERAMIC PACKAGE-4

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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, 0.070 INCH, CERAMIC PACKAGE-4

NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+26dBm TYPICAL OUTPUT POWER
9.0dB TYPICAL POWER GAIN AT 12 GHZ
0.4 dB TYPICAL NOISE FIGURE AT 2GHz
20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY

Part Life Cycle Code	Obsolete	Pin Count	4
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8541.21.00.95	Additional Feature	HIGH RELIABILITY
Configuration	SINGLE	DS Breakdown Voltage-Min	10 V
Drain Current-Max (ID)	0.11 A	FET Technology	HETERO-JUNCTION
Highest Frequency Band	KU BAND	JESD-30 Code	X-CXMW-F4
Number of Elements	1	Number of Terminals	4
Operating Mode	DEPLETION MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	0.78 W
Surface Mount	YES	Terminal Form	FLAT
Terminal Position	UNSPECIFIED	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON