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See Technical Specifications

FGH40N6S2D +BOM

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FGH40N6S2D
Datasheet:

FGH40N6S2D Datasheet (PDF)
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

75 A
Current - Collector Pulsed (Icm):

180 A
Vce(on) (Max) @ Vge, Ic:

2.7V @ 15V, 20A
EDA/CAD Models:

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FGH40N6S2D General Description

The FGH40N6S2D IGBT is designed to provide efficient power control with a low collector-emitter saturation voltage of 1.9V. Its 600V breakdown voltage ensures reliable operation in high-voltage applications. The 3-TO-247 package offers easy mounting through hole installation, making it suitable for a variety of industrial and automotive applications. However, it is important to note that this IGBT is not leaded process compatible and is not RoHS compliant

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	75 A	Current - Collector Pulsed (Icm)	180 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A	Power - Max	290 W
Switching Energy	115µJ (on), 195µJ (off)	Input Type	Standard
Gate Charge	35 nC	Td (on/off) @ 25°C	8ns/35ns
Test Condition	390V, 20A, 3Ohm, 15V	Reverse Recovery Time (trr)	48 ns
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	FGH40	Mount	Through Hole
Collector Emitter Breakdown Voltage	600 V	Collector Emitter Saturation Voltage	2.7 V
Collector Emitter Voltage (VCEO)	600 V	Current Rating	75 A
Element Configuration	Single	Max Collector Current	75 A
Max Operating Temperature	150 °C	Max Power Dissipation	290 W
Min Operating Temperature	-55 °C	Power Dissipation	290 W
Reverse Recovery Time	30 ns	Rise Time	10 ns
Voltage Rating (DC)	600 V