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See Technical Specifications

GB01SLT12-214 +BOM

Serving the electronic industry in France for over 30 years

Manufacturer:

GeneSiC Semiconductor
Mfr.Part #:

GB01SLT12-214
Datasheet:

GB01SLT12-214 Datasheet (PDF)
Series:

SiC Schottky MPS™
Technology:

SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):

1200 V
Current - Average Rectified (Io):

2.5A
EDA/CAD Models:

Request Free CAD Models for GB01SLT12-214

Email: [email protected]

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Tel: +852 95804164

GB01SLT12-214 General Description

Designed for reliability, the GB01SLT12-214 is configured as a single diode and comes in a tape & reel packaging with a factory pack quantity of 2500 pieces. Its compact DO-214 package ensures easy integration into circuit designs while providing excellent thermal performance. Operating within a wide temperature range from -55°C to 175°C, this diode is suitable for harsh environments and demanding applications where stability and durability are essential

Specifications

Series	SiC Schottky MPS™	Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V	Current - Average Rectified (Io)	2.5A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 1 A	Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns	Current - Reverse Leakage @ Vr	10 µA @ 1200 V
Capacitance @ Vr, F	69pF @ 1V, 1MHz	Mounting Type	Surface Mount
Operating Temperature - Junction	-55°C ~ 175°C	Base Product Number	GB01SLT12