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HIP6602BCB +BOM

Two-channel driver with 0.73A current capability for controlling power systems

HIP6602BCB General Description

The HIP6602BCB is a top-of-the-line dual MOSFET driver that is engineered for optimal performance in high-side and low-side configurations. It can efficiently handle a wide VDD range of 4.5V to 14V, with a high-side floating supply range of up to 100V. The inclusion of a built-in bootstrap diode and support for 100% duty cycle operation sets this driver apart in terms of functionality and versatility. Additionally, the independent inputs for controlling the high-side and low-side MOSFETs offer unparalleled flexibility in power stage control, while the programmable dead time control feature ensures smooth switching transitions without the risk of shoot-through currents

Key Features

Drives Four N-Channel MOSFETs

Adaptive Shoot-Through Protection

Internal Bootstrap Devices

Supports High Switching Frequency

- Fast Output Rise Time

- Propagation Delay 30ns

Small 14-Lead SOIC Package

Smaller 16-Lead QFN Thermally Enhanced Package

5V to 12V Gate-Drive Voltages for Optimal Efficiency

Three-State Input for Bridge Shutdown

Supply Undervoltage Protection

Pb-Free Plus Anneal Available (RoHS Compliant)

QFN Package:

- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline

- Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile

Applications

Core Voltage Supplies for Intel Pentium III and AMD Athlon Microprocessors.

High-Frequency, Low-Profile DC/DC Converters

High-Current, Low-Voltage DC/DC Converters

Specifications

Product Category Gate Drivers Type High-Side, Low-Side
Mounting Style SMD/SMT Number of Drivers 4 Driver
Number of Outputs 4 Output Output Current 730 mA
Supply Voltage - Max 13.2 V Rise Time 50 ns
Fall Time 20 ns Minimum Operating Temperature 0 C
Maximum Operating Temperature + 85 C Features Synchronous
Height 1.5 mm Length 8.65 mm
Operating Supply Current 4 mA Operating Supply Voltage 12 V
Product Type Gate Drivers Propagation Delay - Max 30 ns
Subcategory PMIC - Power Management ICs Technology Si
Width 3.9 mm Unit Weight 0.008501 oz

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