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HMC618ALP3E +BOM

GaAs SMT pHEMT Low Noise Amplifier, 1.2 - 2.2 GHz

Manufacturer:

ADI
Mfr.Part #:

HMC618ALP3E
Datasheet:

HMC618ALP3E Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Active
Pin Count:

16
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for HMC618ALP3E

HMC618ALP3E General Description

The HMC618ALP3E, a GaAs pHEMT MMIC Low Noise Amplifier, is a top-notch choice for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers in the frequency range of 1.2 - 2.2 GHz. Designed to deliver exceptional performance, this amplifier boasts a remarkable 0.75 dB noise figure, 19 dB gain, and +36 dBm output IP3 with just a single +5V supply. Its input and output return losses are outstanding, requiring minimal external matching and bias decoupling components for seamless integration. Notably, the HMC618ALP3E shares the same package and pinout with the HMC617LP3E, catering to a broader range of applications

Key Features

Power Consumption: 35mA
Operating Temperature: -40°C to +105°C
Current Gain Bandwidth: 1 GHz
Output Impedance: 50 Ohms
Quiescent Current: 5.2mA
Frequency Response: DC to 500 kHz

Application

Efficient Signal Reception
Advanced Communication Systems
Innovative Technology Solutions

Specifications

Source Content uid	HMC618ALP3E	Pbfree Code	No
Part Life Cycle Code	Active	Pin Count	16
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.33.00.01	Construction	COMPONENT
Mounting Feature	SURFACE MOUNT	Number of Functions	1
Number of Terminals	16	RF/Microwave Device Type	NARROW BAND LOW POWER
Surface Mount	YES	Technology	PHEMT
Terminal Finish	MATTE TIN