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See Technical Specifications

HSCH-5312 +BOM

Small form factor RF diode Schottky suitable for applications requiring 4V voltage and 150mW power, housed in a Case 07 package with 2 pins

Manufacturer:

Broadcom Corporation
Mfr.Part #:

HSCH-5312
Datasheet:

HSCH-5312 Datasheet (PDF)
Series:

HSCH-53xx
Diode Type:

Schottky - Single
Voltage - Peak Reverse (Max):

4V
Capacitance @ Vr, F:

0.15pF @ 0V, 1MHz

HSCH-5312 General Description

The HSCH-5312 is a game-changer in the field of optical communication, offering unmatched performance and reliability for demanding applications. Its silicon waveguide design allows for maximum efficiency in signal detection, ensuring optimal data transmission in even the most challenging environments

Specifications

Category	Discrete Semiconductor ProductsDiodesRF Diodes	Series	HSCH-53xx
Diode Type	Schottky - Single	Voltage - Peak Reverse (Max)	4V
Capacitance @ Vr, F	0.15pF @ 0V, 1MHz	Resistance @ If, F	16Ohm @ 5mA, 1MHz
Power Dissipation (Max)	150 mW	Operating Temperature	-65°C ~ 175°C
Base Product Number	HSCH	Product Category:	RF Detector
Type:	Schottky Detector Diode	Frequency Range:	26 GHz
Configuration:	Single	Operating Supply Voltage:	500 mV
Maximum Diode Capacitance:	0.15 pF	Typical Voltage Sensitivity:	6.6 mV/uW
Technology:	Si	Maximum Operating Temperature:	+ 175 C
Minimum Operating Temperature:	- 65 C	Mounting Style:	SMD/SMT
Packaging:	Bulk	Pd - Power Dissipation:	150 mW
Product Type:	RF Detector	Series:	HSCH
Factory Pack Quantity:	10	Subcategory:	Wireless & RF Integrated Circuits
Typical Tangential Sensitivity:	- 54 dBm	Typical Video Resistance:	1.4 kOhms