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IDH10G65C6 +BOM

Rectifier Diode Schottky SiC 650V 24A 2-Pin(2+Tab) TO-220 Tube

Manufacturer:

INFINEON
Mfr.Part #:

IDH10G65C6
Datasheet:

IDH10G65C6 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Additional Feature:

PD-CASE
EDA/CAD Models:

Request Free CAD Models for IDH10G65C6

Email: [email protected]

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Tel: +852 95804164

IDH10G65C6 General Description

The IDH10G65C6, also known as the CoolSiC™ Schottky diode 650V G6, represents the cutting-edge in technology from Infineon. This SiC Schottky barrier diode takes full advantage of the benefits of silicon carbide over traditional silicon diodes. Infineon has utilized an innovative soldering process and a more compact design, along with thin-wafer technology and a novel Schottky metal system, to create a product family with improved efficiency across all load conditions. The result is a best-in-class figure of merit (Q c x V F), setting a new standard for diode performance

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	PD-CASE
Application	EFFICIENCY	Case Connection	CATHODE
Configuration	SINGLE	Diode Element Material	SILICON CARBIDE
Diode Type	RECTIFIER DIODE	Forward Voltage-Max (VF)	1.35 V
JEDEC-95 Code	TO-220AC	JESD-30 Code	R-PSFM-T2
JESD-609 Code	e3	Non-rep Pk Forward Current-Max	44 A
Number of Elements	1	Number of Phases	1
Number of Terminals	2	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Power Dissipation-Max	72 W
Rep Pk Reverse Voltage-Max	650 V	Reverse Current-Max	33 µA
Reverse Test Voltage	420 V	Surface Mount	NO
Technology	SCHOTTKY	Terminal Finish	TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE