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See Technical Specifications

IR2108S +BOM

High-power MOSFET driver for DC/DC converters and motor drives, handles up to A curren

Manufacturer:

INFINEON
Mfr.Part #:

IR2108S
Datasheet:

IR2108S Datasheet (PDF)
Programmabe:

Not Verified
Driven Configuration:

Half-Bridge
Channel Type:

Independent
Number Of Drivers:

2
EDA/CAD Models:

Request Free CAD Models for IR2108S

IR2108S General Description

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.For the new version with our SOI technology we recommend 2ED2108S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Key Features

Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with HIN input
Low side output out of phase with LIN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time, and programmable up to 5us with one external RDTresistor (IR21084)
Lower di/dt gate driver for better noise immunity
Available in Lead-Free

Specifications

Programmabe	Not Verified	Driven Configuration	Half-Bridge
Channel Type	Independent	Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET	Voltage - Supply	10V ~ 20V
Logic Voltage - VIL, VIH	0.8V, 2.9V	Current - Peak Output (Source, Sink)	200mA, 350mA
Input Type	Non-Inverting	High Side Voltage - Max (Bootstrap)	600 V
Rise / Fall Time (Typ)	150ns, 50ns	Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount