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See Technical Specifications

IR2213S +BOM

Driver 2-OUT High and Low Side 16-Pin SOIC W

Manufacturer:

INFINEON
Mfr.Part #:

IR2213S
Datasheet:

IR2213S Datasheet (PDF)
Programmabe:

Not Verified
Driven Configuration:

Half-Bridge
Channel Type:

Independent
Number Of Drivers:

2
EDA/CAD Models:

Request Free CAD Models for IR2213S

IR2213S General Description

The IR2213S is part of the 1200 V level-shift junction isolated (JI) gate driver family. It offers high performance drive capability with protective features for a cost-competitive solution. Its three-phase gate driver design makes it versatile for a range of applications. Whether for industrial or commercial use, the IR2213S provides the reliability and ruggedness required for demanding environments

Key Features

Floating channel designed for bootstrap operation

Fully operational to +1200V

Tolerant to negative transient voltage

dV/dt immune

Gate drive supply range from 12 to 20V

Undervoltage lockout for both channels

3.3V logic compatible

Separate logic supply range from 3.3V to 20V

Logic and power ground 5V offset

CMOS Schmitt-triggered inputs with pull-down

Cycle by cycle edge-triggered shutdown logic

Matched propagation delay for both channels

Outputs in phase with inputs

Also available LEAD-FREE (PbF)

Specifications

Programmabe	Not Verified	Driven Configuration	Half-Bridge
Channel Type	Independent	Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET	Voltage - Supply	12V ~ 20V
Logic Voltage - VIL, VIH	6V, 9.5V	Current - Peak Output (Source, Sink)	2A, 2.5A
Input Type	Non-Inverting	High Side Voltage - Max (Bootstrap)	1200 V
Rise / Fall Time (Typ)	25ns, 17ns	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount