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IR22141SSPBF +BOM

High voltage driver

IR22141SSPBF General Description

Delivering optimal performance, this gate driver boasts a typical propagation delay of 45ns and rapid rise and fall times of 25ns, enabling precise and swift switching of power MOSFETs in high-frequency applications. Its compact SSOP package further enhances its suitability for space-constrained designs

Key Features

  • Floating channel up to +600 V or +1200 V
  • Soft over-current shutdown
  • Synchronization signal to synchronize shutdown with the other phases
  • Integrated desaturation detection circuit
  • Two stage turn on output for di/dt control
  • Separate pull-up/pull-down output drive pins
  • Matched delay outputs
  • Undervoltage lockout with hysteresis band
  • LEAD-FREE

Specifications

Programmabe Not Verified Driven Configuration Half-Bridge
Channel Type Independent Number of Drivers 2
Gate Type IGBT Voltage - Supply 11.5V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2V Current - Peak Output (Source, Sink) 2A, 3A
Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 1.2 V
Rise / Fall Time (Typ) 24ns, 7ns Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Product Category Gate Drivers
Product Half-Bridge Drivers Type High-Side, Low-Side
Mounting Style SMD/SMT Number of Outputs 2 Output
Output Current 1 A Supply Voltage - Min 11.5 V
Supply Voltage - Max 20 V Rise Time 24 ns
Fall Time 7 ns Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C Features Synchronous
Height 1.75 mm Length 8.2 mm
Logic Type CMOS Maximum Turn-Off Delay Time 440 ns
Maximum Turn-On Delay Time 440 ns Moisture Sensitive Yes
Operating Supply Current 2.5 mA Operating Supply Voltage 10 V to 20 V
Pd - Power Dissipation 1.5 W Product Type Gate Drivers
Propagation Delay - Max 660 ns Factory Pack Quantity 55
Subcategory PMIC - Power Management ICs Technology Si
Width 5.3 mm Part # Aliases SP001547750
Unit Weight 0.019048 oz

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