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IXDN614SI +BOM

High-speed gate drivers designed for low-side MOSFET operation at 14 amperes

IXDN614SI General Description

With its split output design, the IXDN614SI ensures that the input and output supplies remain separate, allowing for precise control over the gate drive voltage levels for the power device. Additionally, its integrated under voltage lockout (UVLO) protection circuit guarantees the gate driver's functionality even when voltage levels are low, providing an added layer of security and reliability in operation

Specifications

feature-maximum-power-dissipation-mw feature-packaging Tube
feature-type IGBT|MOSFET feature-rad-hard
feature-pin-count 8 feature-cecc-qualified No
feature-esd-protection Yes feature-military No
feature-aec-qualified Yes feature-aec-qualified-number AEC-Q100
feature-auto-motive Yes feature-p-pap
feature-eccn-code EAR99 feature-svhc
feature-svhc-exceeds-threshold No

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Ratings and Reviews

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I
I**a 06/24/2023

Packed in plastic container. Before the nn well for a very short time.

3

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In Stock: 7,918

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