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J2607 +BOM

Switch ICs - Various MOSLD EFFECT TRANSISTOR

VISHAY Inventory

Key Features

  • 44A, 200V, rDS(ON) = 0.050Ω
  • Total Dose
  • - Meets Pre-RAD Specifications to 100K RAD (Si)
  • Single Event
  • - Safe Operating Area Curve for Single Event Effects
  • - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
  • Dose Rate
  • - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
  • - Typically Survives 2E12 if Current Limited to IDM
  • Photo Current
  • - 17nA Per-RAD(Si)/s Typically
  • Neutron
  • - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
  • - Usable to 1E14 Neutrons/cm2
VISHAY Original Stock
VISHAY Inventory

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