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JANS2N5794UC/TR +BOM

Bipolar Transistors - BJT Dual Small-Signal BJT

JANS2N5794UC/TR General Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 600mW Surface Mount UC

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Specifications

Product Category Bipolar Transistors - BJT Shipping Restrictions This product may require additional documentation to export from the United States.
Mounting Style SMD/SMT Transistor Polarity NPN
Configuration Dual Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 75 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 900 mV Pd - Power Dissipation 600 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Continuous Collector Current 600 mA DC Current Gain hFE Max 300 at 150 mA, 10 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si

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