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JANTX1N649-1 +BOM
Rectifier diode with 1 element and a silicon material, 0.15A
DO-204AH,DO-35,Axial-
Manufacturer:
Microchip Technology
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Mfr.Part #:
JANTX1N649-1
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Datasheet:
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Technology:
Standard
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Voltage - DC Reverse (Vr) (Max):
600 V
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Current - Average Rectified (Io):
400mA
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Voltage - Forward (Vf) (Max) @ If:
1 V @ 400 mA
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EDA/CAD Models:
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JANTX1N649-1 General Description
Designed to withstand a wide temperature range from -65°C to 175°C, this diode is built to excel in the most challenging environments. Its capability to handle high current and high voltage applications makes it an indispensable component for power rectification in aerospace and military systems
Specifications
Technology | Standard | Voltage - DC Reverse (Vr) (Max) | 600 V |
Current - Average Rectified (Io) | 400mA | Voltage - Forward (Vf) (Max) @ If | 1 V @ 400 mA |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Current - Reverse Leakage @ Vr | 50 nA @ 600 V |
Grade | Military | Qualification | MIL-PRF-19500/240 |
Mounting Type | Through Hole | Operating Temperature - Junction | -65°C ~ 175°C |
Base Product Number | 1N649 |
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