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JANTXV1N5806US +BOM

High-reliability diode for surface mount application

Manufacturer:

Semtech Corporation
Mfr.Part #:

JANTXV1N5806US
Datasheet:

JANTXV1N5806US Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

2
ECCN Code:

EAR99
HTS Code:

8541.10.00.80

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JANTXV1N5806US General Description

The forward voltage drop (Vf) of the JANTXV1N5806US diode is impressively low at 875mV when conducting 1A of current. This means that it exhibits high efficiency and minimal power loss during operation, making it ideal for energy-conscious designs

Key Features

Popular JEDEC registered 1N5802 to 1N5806 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-PRF-19500/477
Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5802US thru 1N5806US)

Specifications

Part Life Cycle Code	Transferred	Pin Count	2
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8541.10.00.80	Factory Lead Time	26 Weeks
Application	SUPER FAST SOFT RECOVERY	Case Connection	ISOLATED
Configuration	SINGLE	Diode Element Material	SILICON
Diode Type	RECTIFIER DIODE	Forward Voltage-Max (VF)	0.875 V
JESD-30 Code	O-LELF-R2	Non-rep Pk Forward Current-Max	35 A
Number of Elements	1	Number of Phases	1
Number of Terminals	2	Operating Temperature-Max	175 °C
Output Current-Max	2.5 A	Qualification Status	Qualified
Reference Standard	MIL-19500/477	Rep Pk Reverse Voltage-Max	150 V
Reverse Recovery Time-Max	0.02 µs	Surface Mount	YES
Terminal Form	WRAP AROUND	Terminal Position	END