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K9F1G08U0A-PIB0 +BOM

Flash, 128MX8, 20ns, PDSO48

Key Features

Voltage Supply- 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V Organization- Memory Cell Array : (128M + 4M) x 8bit- Data Register : (2K + 64) x 8bit Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte Page Read Operation- Page Size : (2K + 64)Byte- Random Read : 25s(Max.)- Serial Access : 25ns(Min.) Fast Write Cycle Time- Page Program time : 200s(Typ.)- Block Erase Time : 1.5ms(Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection- Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate Technology-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)- Data Retention : 10 Years Command Driven Operation Intelligent Copy-Back with internal 1bit/528Byte EDC Unique ID for Copyright Protection Package :- K9F1G08U0B-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

Specifications

Product Category Memory ICs

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