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See Technical Specifications

KAF-1001-AAA-CP-B1 +BOM

CCD Image Sensor 1024H x 1024V 24µm x 24µm 26-CDIP

Manufacturer:

onsemi
Mfr.Part #:

KAF-1001-AAA-CP-B1
Datasheet:

KAF-1001-AAA-CP-B1 Datasheet (PDF)
Type:

CCD
Pixel Size:

24µm x 24µm
Active Pixel Array:

1024H x 1024V
Voltage - Supply:

15V ~ 17.5V
EDA/CAD Models:

Request Free CAD Models for KAF-1001-AAA-CP-B1

KAF-1001-AAA-CP-B1 General Description

EOL has been announced for this device

The KAF-1001 Image Sensor is a high-performance charge-coupled device (CCD) designed for a wide range of image sensing applications.

The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes a Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode.

Selectable on-chip output amplifiers allow operation to be optimized for different imaging needs: Low Noise (when using the high-sensitivity output) or Maximum Dynamic Range (when using the low-sensitivity output).

Key Features

True Two Phase Full Frame Architecture
Transparent Gate Electrode for high sensitivity
100% Fill Factor
Low Dark Current
Single Readout Register
User-selectable outputs allow either Low Noise or High Dynamic Range operation

Application

Medical
Scientific

Specifications

Series	-	Type	CCD
Pixel Size	24µm x 24µm	Active Pixel Array	1024H x 1024V
Voltage - Supply	15V ~ 17.5V	Operating Temperature	-50°C ~ 50°C (TA)
Base Product Number	KAF-1001