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LF356N/NOPB +BOM

This IC offers a high bandwidth of 5MHz while consuming only 5mA of current

LF356N/NOPB General Description

The LF356N/NOPB is a ground-breaking product that pushes the boundaries of operational amplifier technology. By incorporating high-voltage JFETs and standard bipolar transistors on a single chip using BI-FET™ Technology, this amplifier achieves unparalleled levels of performance and precision. Its low input bias and offset currents, along with low offset voltage and drift, make the LF356N/NOPB a standout in the world of operational amplifiers. The device's offset adjust feature ensures that drift and common-mode rejection remain optimal. Furthermore, with its high slew rate, wide bandwidth, rapid settling time, and minimal voltage and current noise, the LF356N/NOPB is a versatile solution for a wide range of applications requiring high-quality amplification

Key Features

  • Solution Oriented
  • Real Time Analysis
  • Ultra Fast Response
  • Micropower Efficiency
  • Low Noise Guarantee
  • High Accuracy Precision

Application

  • Advanced medical device use
  • Control system optimized
  • High accuracy amplifier

Specifications

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+
GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12
Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 5
Vn at 1 kHz (typ) (nV√Hz) 12 Rating Catalog
Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 3
Input bias current (max) (pA) 8000 CMRR (typ) (dB) 100
Iout (typ) (A) 0.025 Architecture FET
Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1
Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2

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