This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

LM5110-1M +BOM

French Electronic Distributor since 1988

Manufacturer:

TI
Mfr.Part #:

LM5110-1M
Datasheet:

LM5110-1M Datasheet (PDF)
Programmabe:

Not Verified
Driven Configuration:

Low-Side
Channel Type:

Independent
Number Of Drivers:

2
EDA/CAD Models:

Request Free CAD Models for LM5110-1M

LM5110-1M General Description

What sets the LM5110-1M apart is its focus on high-frequency operation, with a quick propagation delay of 10ns and a maximum switching frequency of 5MHz. This ensures rapid and efficient switching of power MOSFETs, resulting in superior performance. Additionally, the gate driver features adaptive shoot-through protection, which enhances efficiency by preventing simultaneous conduction of high-side and low-side MOSFETs

Specifications

Programmabe	Not Verified	Driven Configuration	Low-Side
Channel Type	Independent	Number of Drivers	2
Gate Type	N-Channel MOSFET	Voltage - Supply	3.5V ~ 14V
Logic Voltage - VIL, VIH	0.8V, 2.2V	Current - Peak Output (Source, Sink)	3A, 5A
Input Type	Non-Inverting	High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	14ns, 12ns	Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount