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See Technical Specifications

LTE3401HX +BOM

SiGe:C Low Noise Amplifier MMIC with Bypass Switch for LTE

Manufacturer:

NXP Semiconductor
Mfr.Part #:

LTE3401HX
Datasheet:

LTE3401HX Datasheet (PDF)
Frequency:

1.452GHz ~ 2.69GHz
P1dB:

-7.5dBm
Gain:

17.5dB
Noise Figure:

0.75dB
EDA/CAD Models:

Request Free CAD Models for LTE3401HX

LTE3401HX General Description

The LTE3401H is a high-gain low noise amplifier (LNA) with bypass switch for LTEreceiver applications, available in a small plastic 6-pin thin leadless package.The LTE3401H delivers system-optimized gain for both primary and diversity applicationswhere sensitivity improvement is required. The high linearity of this low noise deviceensures the required receive sensitivity independent of cellular transmit power level infrequency division duplex (FDD) systems. When receive signal strength is sufficient, theLTE3401H can be switched off to operate in bypass mode at increased IP3i level and a 1μA supply current, to lower power consumption. The LTE3401H is internally AC coupledand requires only one external matching inductor.The LTE3401H is optimized for 1710 MHz to 2690 MHz, but supports 1452 MHz - 1710MHz as well.

Key Features

SiGe:C Low Noise Amplifier MMIC with Bypass Switch for LTE

Specifications

Category	RF and WirelessRF Amplifiers	Series	-
Frequency	1.452GHz ~ 2.69GHz	P1dB	-7.5dBm
Gain	17.5dB	Noise Figure	0.75dB
RF Type	LTE	Voltage - Supply	1.5V ~ 3.1V
Current - Supply	13.4mA	Test Frequency	2.69GHz
Mounting Type	Surface Mount	Base Product Number	LTE3401